Noise Tailoring in Memristive Filaments

In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To end, resistance and frequency scaling low-frequency 1/f-type properties studied representative mainstream material systems. It is shown that overall floor tailorable by proper choice, as demonstrated order-of-magnitude smaller levels Ta2O5 Nb2O5 transition-metal oxide memristors compared to Ag-based devices. Furthermore, variation states allows orders-of-magnitude tuning relative level all these This behavior analyzed framework a point-contact model highlighting possibility for disorder-induced suppression contribution arising from remote fluctuators. These findings promote design multipurpose units, which can simultaneously serve analog-tunable elements tunable sources probabilistic computing machines.